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Epitaxial Buffer Layers on (012) Sapphire and (100) SrTiO3 for the Integration of YBa2Cu3Ox in Microwave Devices and Squids

Published online by Cambridge University Press:  26 February 2011

H. Schmidt ,
G. Vollnhals ,
G. Gieres ,
W. Wersing  and
H. Kinder
H. Schmidt
Affiliation:
Siemens AG, Corporate Research and Development, 8000 München 83, Germany
G. Vollnhals
Affiliation:
TU München, Fakultät für Physik, Department E 10,8046 Garching, Germany
G. Gieres
Affiliation:
Siemens AG, Corporate Research and Development, 8000 München 83, Germany
W. Wersing
Affiliation:
Siemens AG, Corporate Research and Development, 8000 München 83, Germany
H. Kinder
Affiliation:
TU München, Fakultät für Physik, Department E 10,8046 Garching, Germany
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Abstract

The epitaxial growth of YBa2Cu3Ox films on sapphire for microwave applications requires epitaxial buffer layers hindering interdiffusion. Therefore the epitaxial growth of YSZ, the layer sequence Y2O3/YSZ, and Y2O3 on (012) sapphire was examined. In addition the growth of MgO and srTiO3 on sapphire substrates and the growth of MgO and CeO2 on SrTiO3 substrates was studied by X-ray diffraction, X-ray pole figure measurement and RBS-ion channeling. With a combination of these buffer layers bi-epitaxial grain boundaries in YBa2Cu3Ox films can be fabricated in future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 149
Copyright
Copyright © Materials Research Society 1992

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References

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