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Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

  • D. L. Doering (a1), F. S. Ohuchi (a2), W. Jaegermann (a2) and B. A. Parkinson (a2)

The growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

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2. A. Koma and K. Yoshimura , Surface Sci. 174, 556 (1986).

3. H. I. Starnberg and H. P. Hughes , J. Phys. C; Solid State Physics 20, 4429 (1987).

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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