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Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

  • D. L. Doering (a1), F. S. Ohuchi (a2), W. Jaegermann (a2) and B. A. Parkinson (a2)
Abstract
ABSTRACT

The growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

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2. A. Koma and K. Yoshimura , Surface Sci. 174, 556 (1986).

3. H. I. Starnberg and H. P. Hughes , J. Phys. C; Solid State Physics 20, 4429 (1987).

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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