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Epitaxial growth of Si nanowires by a modified VLS method using molten Ga as growth assistant

  • Annika Gewalt (a1), Bodo Kalkofen (a2), Marco Lisker (a3) and Edmund P. Burte (a4)

In this paper the deposition and morphological characterization of gallium island structures on silicon and first results of silicon wire growth assisted by the created gallium droplets is presented. The islands and wires were grown on (111)-oriented single crystalline p-doped silicon substrates by microwave plasma enhanced chemical vapor deposition (MW PECVD) using trimethylgallium (TMGa) and silane (SiH4) as precursors for island and wire growth, respectively. The samples were investigated by SEM, EDS, XPS, and AFM.

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MRS Online Proceedings Library (OPL)
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  • EISSN: 1946-4274
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