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    Gabrielyan, Nare Saranti, Konstantina Manjunatha, Krishna Nama and Paul, Shashi 2013. Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications. Nanoscale Research Letters, Vol. 8, Issue. 1, p. 83.

  • MRS Proceedings, Volume 1144
  • January 2008, 1144-LL03-11

Epitaxial growth of Si nanowires by a modified VLS method using molten Ga as growth assistant

  • Annika Gewalt (a1), Bodo Kalkofen (a2), Marco Lisker (a3) and Edmund P. Burte (a4)
  • DOI:
  • Published online: 01 February 2011

In this paper the deposition and morphological characterization of gallium island structures on silicon and first results of silicon wire growth assisted by the created gallium droplets is presented. The islands and wires were grown on (111)-oriented single crystalline p-doped silicon substrates by microwave plasma enhanced chemical vapor deposition (MW PECVD) using trimethylgallium (TMGa) and silane (SiH4) as precursors for island and wire growth, respectively. The samples were investigated by SEM, EDS, XPS, and AFM.

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