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Epitaxial Growth of Two-Dimensional Dichalcogenides and Modification of Their Surfaces with Scanning Probe Microscopes

Published online by Cambridge University Press:  21 February 2011

Bruce A. Parkinson
Bruce A. Parkinson*
Affiliation:
Department of Chemistry, Colorado State University, Fort Collins, CO 80523
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Abstract

Methods for epitaxial growth of two dimensional materials are described. The lack of interlayer bonding in these materials allows for epitaxial growth with large lattice mismatches. Growth of MoSe2 on MoS2 (a 5% mismatch) or on SnS2 (10% mismatch) can be demonstrated. Scanning tunneling microscopy (STM) revealed remarkable structures in the epilayer as a result of the large mismatches. A technique using the STM or atomic force microscope (AFM) to selectively remove single molecular layers from the surface of layered materials is also described. The combination of these two technologies may result in the ability to produce nanoscale devices exhibiting quantum size effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 79
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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