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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates

Published online by Cambridge University Press:  15 February 2011

Zhonghai Yu ,
M.A.L. Johnson ,
J.D. Brown ,
N.A. El-Masry ,
J. F. Muth ,
J.W. Cook Jr ,
J.F. Schetzina ,
K.W. Haberern ,
H.S. Kong  and
J.A. Edmond
Zhonghai Yu
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, jan-schetzina@ncsu.edu
M.A.L. Johnson
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, jan-schetzina@ncsu.edu
J.D. Brown
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, jan-schetzina@ncsu.edu
N.A. El-Masry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695
J. F. Muth
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, jan-schetzina@ncsu.edu
J.W. Cook Jr
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, jan-schetzina@ncsu.edu
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh NC 27695, jan-schetzina@ncsu.edu
K.W. Haberern
Affiliation:
Cree Research Inc, 4600 Silicon Drive, Durham NC 27703
H.S. Kong
Affiliation:
Cree Research Inc, 4600 Silicon Drive, Durham NC 27703
J.A. Edmond
Affiliation:
Cree Research Inc, 4600 Silicon Drive, Durham NC 27703
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Abstract

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.3
Copyright
Copyright © Materials Research Society 1999

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