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Epitaxial YSi2−x and ErSi2−x Thin Films on (111) Silicon

Published online by Cambridge University Press:  25 February 2011

T.L. Lee ,
W.D. Su  and
L.J. Chen
T.L. Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hlsinchu, Taiwan, Republic of China
W.D. Su
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hlsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hlsinchu, Taiwan, Republic of China
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Abstract

Epitaxial RSi2−x (R = Y and Er) has been grown on (111)Si by solid phase epitaxy in ultrahigh vacuum deposited metal thin films on silicon. The evolution of vacancy ordering and defect structure in epitaxial YSi2−x. and ErS2−x thin films on (111)Si have been studied by both conventional and high resolution transmission electron microscopy.

Superlattice spots located at ⅓{2110} in [0001]RS2−x, diffraction patterns are attributed to the formation of ordered vacancy structure in the Si sublattice planes. The splitting of extra diffraction spots is correlated to the formation of an out-of-step structure. Streaking of the split diffraction spots in the diffraction pattern is attributed to the presence of an out-of-step structure with a range of M values. The M was found to settle down to a fixed value after high temperature and/or long time annealing.

Planar defects in RSi2™x films were analyzed to be stacking faults on {1010} planes with ⅙<1213> displacement vectors. Computer simulation was carried out to model the atomic structure of stacking fault in YS2−x-. thin films. The simulated images are seen to match rather well with experimental images taken under two different values of defocus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 249
Copyright
Copyright © Materials Research Society 1992

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References

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