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Epitaxy of Arsenic-Pressure-Controlled MBE-Grown GaAs Layers

Published online by Cambridge University Press:  28 February 2011

Y.H. Wang ,
W.C. Liu ,
C.Y. Chang ,
M.S. Jean  and
S.A. Liao
Y.H. Wang
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China
W.C. Liu
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China
C.Y. Chang
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China
M.S. Jean
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China
S.A. Liao
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng-Kung University, Tainan, Taiwan, Republic of China
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Abstract

Surface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration, substrate type, etc., are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga "spitting" from the effusion cell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 49
Copyright
Copyright © Materials Research Society 1986

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