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EPR of Mn2+ and Gd3+ Ions in PbTe and SnTe Semiconductors

Published online by Cambridge University Press:  26 February 2011

Marian Bartkowski ,
D. J. Northcott ,
A. H. Reddoch ,
D. F. Williams ,
F. T. Hedgcock  and
Z. Korczak
Marian Bartkowski
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, KIA OR6, Canada
D. J. Northcott
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, KIA OR6, Canada
A. H. Reddoch
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, KIA OR6, Canada
D. F. Williams
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, KIA OR6, Canada
F. T. Hedgcock
Affiliation:
Department of Physics, McGill University, Montreal, H3A 2T8, Canada
Z. Korczak
Affiliation:
Institute of Physics, M. Curie-Sklodowska University, Lublin 20-031, Poland
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Abstract

The EPR spectra of manganese and gadolinium doped PbTe and SnTe semiconductors were measured from 4.2K up to 400K for dopant concentrations ranging from 50 to 50000 ppm. Resolved fine, hyperfine and superhyperfine structure as well as forbidden and cluster lines were measured. The combination of Lorentzian absorption and dispersion derivatives fits the recorded spectra well. Nonlinear broadening of linewidths with temperature is characteristic in these semiconductors. A manganese-induced broad maximum in linewidth versus temperature was found in PbTe around 180K for dopant concentrations in excess of 1.5at%.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 135
Copyright
Copyright © Materials Research Society 1987

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References

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