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ETCH Rate and Thickness Measurements of Layered GaAs, AlAs and AlGaAs Structures Using a Laser Reflectance Technique

Published online by Cambridge University Press:  22 February 2011

Louise H. Grober ,
M. Hong ,
R.D. Grober ,
J.P. Mannaerts  and
R.S. Freund
Louise H. Grober
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ. 07974
M. Hong
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ. 07974
R.D. Grober
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ. 07974
J.P. Mannaerts
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ. 07974
R.S. Freund
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ. 07974
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Abstract

Laser reflectometry has been shown to be a useful tool for etch depth measurements during etching of multiple layer structures. We have extended the use of laser reflectometry to accurately determine the etch rates of GaAs, Al0.4Ga0.6As and AlAs as a function of temperature and to verify layer thickness in-situ. By use of computer simulation we compare a theoretical model to actual data to determine layer thicknesses and accurate etch rates. We compare our data to previously published work for GaAs etching.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 227
Copyright
Copyright © Materials Research Society 1994

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References

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