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Evaluation on Defects of Er and Yb Implanted Al070Ga030As by Using Positron Annihilation Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Tomoyuki Arai ,
Shin-ichiro Uekusa  and
Akira Uedono
Tomoyuki Arai
Affiliation:
tomoarai@isc.meiji.ac.jp, Meiji Univ., Dept. of Science and Technology, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan, 81-44-934-7306, 81-44-934-7909
Shin-ichiro Uekusa
Affiliation:
uekusa@isc.meiji.ac.jp, Meiji University, Dept. of Science and Technology, Japan
Akira Uedono
Affiliation:
uedono@sakura.cc.tsukuba.ac.jp, Tsukuba University, Institute of Applied Physics, Japan
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Abstract

The influence on defects of Er implanted Al0.70Ga0.30As was studied, using standard Positron Annihilation Spectroscopy (PAS) and Photoluminescence (PL) technique. The incident energy of mono-energetic positrons was implanted from 0.1 eV to 30 keV. The characterization of un-doped Al0.70Ga0.30As and Al0.70Ga0.30As:Er,Yb as implanted, and Al0.70Ga0.30As:Er,Yb annealed ranging from 500 to 900 °C were successfully studied by using PAS technique. Into the incident energy around 5keV, the shape parameter of Al0.70Ga0.30As:Er,Yb annealed ranging from 500 to 900 °C was decreased and the PL intensity also increased in response to the annealing temperature ranging from 500 to 900 °C.

Keywords

defectsErion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-27
Copyright
Copyright © Materials Research Society 2006

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References

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