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The Evolution of Nitride Semiconductors

Published online by Cambridge University Press:  10 February 2011

I. Akasaki
I. Akasaki*
Affiliation:
Dept. of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, JAPAN
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Abstract

The great scientific and commercial success of the group-III nitrides in recent years is the result of persistent fundamental research over a time span of three decades. In the late 60's and in the early 70's the very heart of gallium nitride research was located in J.I. Pankove's laboratory at RCA. There the first single crystalline GaN was grown by Maruska and Tietjen and the very first GaN light emitting diodes were produced by Pankove in September 1971, 26 years ago. Since then the community of nitride research has come a long and troublesome way, but it has succeeded. This 1997 Fall Meeting Symposium on Nitride Semiconductors of the Materials Research Society is dedicated to Professor J.I. Pankove for his outstanding and groundbreaking contributions in the early development of group-III nitride research. This paper reports a historical summary of the evolution of the field summarizing the landmark contributions that have led to the current status of success.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

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