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Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics

Published online by Cambridge University Press:  01 February 2011

Massimo Camarda ,
Antonino La Magna ,
Andrea Canino  and
Francesco La Via
Massimo Camarda
Affiliation:
massimo.camarda@imm.cnr.it
Antonino La Magna
Affiliation:
antonino.lamagna@imm.cnr.it, United States
Andrea Canino
Affiliation:
andrea.canino.ct@gmail.com, CNR-IMM, IMM, Z.I. VIII Strada 5 I, Catania, 95121, Italy
Francesco La Via
Affiliation:
francesco.lavia@imm.cnr.it, CNR-IMM, IMM, Z.I. VIII Strada 5 I, Catania, 95121, Italy
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Abstract

Three dimensional kinetic Monte Carlo simulations on super-lattices are applied to study the evolution of stacking faults during epitaxial growths. We show that, in the case of misoriented close packed substrates, these defects can either extend throughout the entire epilayer (i.e. extended from the substrate up to the surface) or close in dislocation loops, in dependence of the deposition conditions. We explain this behavior in terms of a surface kinetic competition between these defects and the surrounding crystal: if the local growth rate of the defect is larger compared with that of the perfect crystal the defect will expands, otherwise it will closes. This mechanisms allows to explain several experimental results on homo and hetero epitaxies.

Keywords

crystallographic structurecrystal growthdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B03-04
Copyright
Copyright © Materials Research Society 2010

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