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Excimer Laser Recrystallization of Selectively Floating a-Si Active Layer for Large-Grained Poly-Si Film

Published online by Cambridge University Press:  17 March 2011

Cheon-Hong Kim ,
Juhn-Suk Yoo ,
In-Hyuk Song  and
Min-Koo Han
Cheon-Hong Kim
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Juhn-Suk Yoo
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
In-Hyuk Song
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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Abstract

We report a new excimer laser annealing method by employing selectively floating a-Si active layer structure in order to increase the grain size of poly-Si film. The floating a-Si region blocks the heat conduction into the underlying substrate due to high thermal-insulating property of an air so that the lateral temperature gradient is successfully induced by the proposed simple air-gap structure. Our experimental results show that large grains were grown in the lateral direction from the edge to the center of the floating active region. The large grains exceeding 4 m were successfully obtained with only one laser irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.11
Copyright
Copyright © Materials Research Society 2001

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References

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