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Excitation Frequency-Dependent Raman Scattering in a-Sic:H Alloys

Published online by Cambridge University Press:  16 February 2011

G. Morel ,
R.S. Katiyar ,
S.Z. Weisz  and
I. Balberg
G. Morel
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343, USA
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343, USA
S.Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR 00931–3343, USA
I. Balberg
Affiliation:
The Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
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Abstract

We have carried out a comprehensive Raman scattering study of a-S1-xCx:H alloys using three laser excitations: 458, 514, and 581 nm. The alloys studied were prepared with and without H2 dilution, had carbon concentrations, x, between 7 and 20 at %, and Taue optical gaps in the range of 1.8 ≤ Eg ≤ 2.2 eV. The results obtained explain the previous conflicting reports in the literature regarding the Si network disorder and indicate that in the Si-rich compositions, chemical clustering takes place with increasing carbon content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 607
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Inoue, Y., Nakashima, S., Mitsuishi, A., Tabata, S., Tsuboi, S., Solid St. Comm. 48, 1071 (1983).Google Scholar
2. Morimoto, A., Oozora, S., Kumeda, M. and Shimizu, T., Solid St. Comm. 47, 773 (1983).CrossRefGoogle Scholar
3. Asano, A., Ichimura, T. and Sakai, H., J. Appl. Phys. 65, 2439 (1989).CrossRefGoogle Scholar
4. Ramsteiner, M., Wagner, J., Wild, Ch. and Kaidi, P., J. Appl. Phys. 62, 729 (1987).Google Scholar
5. Schubert, M.B., Mohring, H.D., Lotter, E., Bauer, G.H., IEEE Trans. Elec. Dev. 36, 2863 (1989).CrossRefGoogle Scholar
6. SHicks, E., Fitzgerald, A.G., Baker, S.H. and Dines, T.J., Phil. Mag. B 62, 193 (1990).CrossRefGoogle Scholar
7. Bhusari, D.M., Dušane, R.O. and Kirshrager, S.J., J. Non Cryst. Solids, 137 & 138, 689 (1991).Google Scholar
8. Tzolov, M.B., Tzenov, N.V., and Dimova-Malinovska, D.I., J. Appl. Phys. 74, 2731 (1993).Google Scholar
9. Meneghini, C., Pascarelli, S., Boscherini, F., Mobilia, S., and Evangelisti, F., J. Non Cryst. Sol. 137 & 138, 75 (1991).CrossRefGoogle Scholar
10. Evangelisti, F., J. Non Cryst. Solids 164–166, 1009 (1993).CrossRefGoogle Scholar
11 Demichelis, F., Crovini, G., Giorgis, F., Pirri, C.F., Tresso, E., Amato, G., Herremans, H., Grevendonk, W., and Rava, P., J. Non Cryst. Solids, 164–166, 1015 (1993).Google Scholar
12. Smith, Z.E., Matsuda, A., Matsuda, H., Obeday, H., Tanaka, M. and Yokoyama, S., J. Non Cryst. Solids 114, 480 (1989).CrossRefGoogle Scholar
13. Robertson, J., Phil. Mag. B 66, 615 (1992), and references therein.Google Scholar
14. Baker, S.H., Spear, W.E. and Gibson, R.A.G., Phil. Mag. B 62, 213 (1990).Google Scholar
15. Maley, N. and Lanin, J.S., Phys. Rev. B 36, 1146 (1987).Google Scholar
16. Tsu, R., in Disordered Semiconductors, edited by Kastner, M.A., Thomas, G.A., and Ovshinsky, S.R. (Plenum Publishing Corp., 1987) p. 479.CrossRefGoogle Scholar
17. Moreli, G., Katiyar, R.S., Weisz, S.Z., Gomez, M., and Balberg, I., in Amorphous Silicon Technology, edited by Schiff, E.A., Thompson, M.J., Madan, A., Tanaka, K., and LeComber, P.G. (Mater. Res. Soc. Proc. 297, San Francisco, CA, 1993), pp. 321–326.Google Scholar
18. Sokolov, A.P., Shebanin, A. P., Golikova, O.A., and Mezdrogina, M.M., J. Non Cryst. Solids 137 & 138, 99 (1991).Google Scholar
19. Li, Y.M., Fieselmann, B.F., and Catalano, A., in Proc. of the XXIIth IEEE PVSC (IEEE, New York, 1991), p. 1231.Google Scholar
20. Fathallah, M., J. Non Cryst. Solids 164–166, 909 (1993).Google Scholar
21. Lu, Y., An, I., Gunes, M., Wakagi, M., Wronski, C.R. and Collins, R.W., in Amorphous Silicon Technology, edited by Schiff, E.A., Thompson, M.J., Madan, A., Tanaka, K., and LeComber, P.G. (Mater. Res. Soc. Proc. 297, San Francisco, CA, 1993), pp. 31–36.Google Scholar
22. Mahan, A.H., Raboisson, P., Williamson, D.L., and Tsu, R., Solar Cells 21, 117 (1987).Google Scholar
23. Smith, F.W. and Yin, Z., J. Non Cryst. Solids, 137 & 138, 872 (1991).Google Scholar
24. Wieder, H., Cardona, M. and Guarieri, C.R., Phys. Stat. Sol. B 92, 99 (1979).Google Scholar