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Excitation Spectroscopy on Silicon Using Color Center Lasers Study of the Thermally Induced P Line (0.767eV) Defect

Published online by Cambridge University Press:  28 February 2011

J. Wagner ,
A. Dörnen  and
R. Sauer
J. Wagner
Affiliation:
Max—Planck—Institut für Festkötidle;rperforschung, Heisenbergstr. 1, D–7000 Stuttgart 80, F. R., Germany
A. Dörnen
Affiliation:
Physikalisches Institut (Teii 4) der Universität Stuttgart Pfaffenwaldring 57, D—7000 Stuttgart 80, F. R., Germany
R. Sauer
Affiliation:
Physikalisches Institut (Teii 4) der Universität Stuttgart Pfaffenwaldring 57, D—7000 Stuttgart 80, F. R., Germany
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Abstract

Recently developed tunable color center lasers allow to extend the experimental technique of excitation spectroscopy to the 1–2 μm region. This spectral range is of special interest for the study of luminescent defects in silicon. We discuss the color center laser systems available at present and their application to defect spectroscopy. As an example, results on the 0.767 eV (P line) defect in silicon are presented. Excitation spectroscopy reveals several high lying excited electronic states. They are interpreted as effective—mass—like states of a pseudo-donor with an ionization energy of 34.3 meV.

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