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Excitonic Properties of ZnSe-ZnS Strained-Layer Superlattices and A Fibonacci Sequence

Published online by Cambridge University Press:  21 February 2011

Tsunemasa Taguchi  and
Yoichi Yamada
Tsunemasa Taguchi
Affiliation:
Department of Electrical Engineering, Faculty of Engineeringm, Osaka University, Suita, Osaka 565, Japan
Yoichi Yamada
Affiliation:
Department of Electrical Engineering, Faculty of Engineeringm, Osaka University, Suita, Osaka 565, Japan
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Abstract

Excitonic properties of ZnSe-ZnS strained-layer quantum wells (SLQWs) with type I band lineups are reviewed on the basis of our recent results of temperature- and strain-dependent photoluminescence and absorption spectra. In order to estimate the conduction and valence band offsets as a function of ZnSe well thickness, we have modified the “model-solid” theory in which the valence bands (heavy-hole band in ZnSe and light-hole band in ZnS) are relatively moved with strains. Temperature and high excitation dependent studies of the n=1 heavy-hole excitons suggest a localization of excitons and reveals the important evidence on scatterings of excitons with acoustic and optical phonons. The thermal quenching of the exciton emission is caused by thermal dissociation of quasi-two-dimensional excitons through electrons and holes, from which the activation energy for this dissociation is 4 times larger than Ea.3D (a binding energy of bulk exciton) of ZnSe. A new superlattice structure with a quasiperiodic crystal which is derived from a finite Fibonacci sequence, has been fabricated by a low-pressure MOCVD method and its photoluminescence properties are for the first time introduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 199
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Bhargava, R.N., J. Lumi. 40/41, 24 (1988).Google Scholar
[2] Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., Datta, S., Becker, W.M. and Nurmikko, A.V., IEEE J. Quantum Elect. QE22, 1666 (1986).Google Scholar
[3] Kawakami, Y. and Taguchi, T., J. Vac. Sci. and Technol. B7, 789 (1989).Google Scholar
[4] Suemune, I., Yamada, K., Masato, H., Kan, Y. and Yamanishi, M., Appl. Phys. Lett. 54, 981 (1989).Google Scholar
[5] Yokogawa, T., Ogura, M. and Kajiwara, T., Appl. Phys. Lett. 52, 120 (1988).Google Scholar
[6] Yokogawa, T. and Narusawa, T., presented in the 4th Int. Conf. on II-VI Compounds, West Berlin (1989) September, to be published in J.Cryst.GrowthGoogle Scholar
[7] Endoh, Y. and Taguchi, T., This volume.Google Scholar
[8] Hiroshima, T., Hanamura, E. and Yamanishi, M., Phys. Rev. B38, 1241 (1988).Google Scholar
[9] Yamada, Y. and Taguchi, T., presented in the 4th Int. Conf. on II-VI Compounds, West Berlin (1989) September, to be published in J. Cryst. GrowthGoogle Scholar
[10] Kawakami, Y., Taguchi, T., Satoh, M. and Hiraki, A., Nucl. Inst. and Methods B33, 603 (1988).Google Scholar
[11] Hayashi, H. and Katayama, S., Phys. Rev. B39, 8743 (1989).Google Scholar
[12] Yamada, Y. and Taguchi, T., Tech. Rept. Osaka Univ. 39, 211 (1989).Google Scholar
[13] Merlin, R., Bajema, K., Clarke, R., Juang, F.Y. and Bhattacharya, P.K., Phys. Rev. Lett. 55, 1768 (1985).Google Scholar
[14] Taguchi, T., Hayamizu, S., Fujiyasu, H., Satoh, M., Yao, T. and Hiraki, A., Proc. Int. Symp. Hosei Univ.; Application of Ion Beams in Materials Science p.511 (1988).Google Scholar
[15] Cooman, B.C. De, Carter, C.B., Wicks, G.W., Tanoue, T. and Eastman, L.F., Thin Solid Films 170, 49 (1989).Google Scholar
[16] Langer, D.W., Euwema, R.N., Era, K. and Koda, T., Phys. Rev. B2, 4005 (1970).Google Scholar
[17] Bailey, P.T., Phys. Rev. B1, 588 (1970).Google Scholar
[18] Lee, Y.C. and Lin, D.L., Phys. Rev. B19, 1982 (1979).Google Scholar
[19] Wu, Ji-Wei, Solid St.. Commun. 69, 1057 (1989).Google Scholar
[20] Feldmann, J., Peter, G., Gobel, E.O., Dawson, P., Moore, K., Foxon, C. and Elliott, R.J., Phys. Rev. Lett. 59, 2337 (1987).Google Scholar
[21] Matsuura, M., Phys. Rev. B37, 6977 (1988).Google Scholar
[22] Masumoto, Y., (private communication).Google Scholar
[23] Kato, H., Iguchi, N., Chika, S., Nakayama, M. and Sano, N., J. Appl. Phys. 59, 588 (1986).Google Scholar
[24] Walle, C.G. Van de, Phys. Rev. B39, 1871 (1989).Google Scholar
[25] Kawakami, Y., Taguchi, T. and Hiraki, A., J. Cryst. Growth 93, 714 (1988), Our early expectation from the type I to type I' conversion is caused by following the previous model after C.G.Van de Walle and R.M. Martin (Phys. Rev. B34, 5621 (1986)). Figs.5 and 6 are not correct and Fig.5 should be replaced by Fig.8 in the present review.Google Scholar
[26] Shahzad, K., Olego, D.J. and Walle, C.G. Van de, Phys. Rev. B38, 1417 (1988).Google Scholar
[27] Venghaus, H. and Lambrich, R., Solid St. Commun. 25, 109 (1978).Google Scholar
[28] Lee, J., Koteles, E.S. and Vassell, M.O., Phys. Rev. B33, 5512 (1986).Google Scholar
[29] Hanamura, E., Phys. Rev. B38, 1228 (1988).Google Scholar
[30] Yamada, Y. and Taguchi, T., Jap. J. Appl. Phys. (1990) to be publishedGoogle Scholar