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Experimental and Theoretical Analysis of Strain Relaxation in GexSi1-x/Si(100) Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

R. Hull  and
J.C. Bean
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

By analyzing in-situ strain relaxation measurements of GexSi1-x/Si(100) epitaxy in a Transmission Electron Microscope, we are able to quantify the fundamental parameters which describe strain energy relaxation via misfit dislocation introduction. Quantitative descriptions of misfit dislocation nucleation, propagation and interaction processes are derived. The numerical parameters obtained from these experiments are then incorporated into a predictive theoretical model of strain relaxation whichrelies only upon experimentally measured quantities. Good agreement between experiment and theory is obtained over a wide range of data.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 309
Copyright
Copyright © Materials Research Society 1989

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