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Experimental and Theoretical Study of Structure-Dielectric Property Relationships for Polysilsesquioxanes

Published online by Cambridge University Press:  10 February 2011

Sung Mog Kim ,
Do Y. Yoon ,
Cattien V. Nguyen ,
Jie Han  and
Richard L. Jaffe
Sung Mog Kim
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099
Do Y. Yoon
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120-6099
Cattien V. Nguyen
Affiliation:
Eloret/Thermal Science Institute, 690 W. Fremont, Sunnyvale, CA 94087
Jie Han
Affiliation:
NASA Ames Research Center, Moffett Field, CA 94035-1000
Richard L. Jaffe
Affiliation:
NASA Ames Research Center, Moffett Field, CA 94035-1000
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Abstract

Structures of polysilsesquioxanes {(R- SiO1.5)n with R=H, CH3, C6H5} in spin-on thin films are investigated in relation to their dielectric properties. IR spectroscopy in combination with results from quantum chemistry calculations shows that the initial hydrido-silsesquioxane films (cured to 250 °C) exhibit more symmetric ring structures than those for methyl-silsesquioxanes. Moreover, IR spectra indicate that increasing the cure temperature above a critical value, which varies with the Si-R moiety, causes extensive three-dimensional cross-linking in silsesquioxanes via breakage of the Si-R bond and formation of networks of O-Si-O structures with a lower ring symmetry than the initial materials. Dielectric properties do not appear to vary with the structural symmetry about the O-Si-O moiety nor with the R substituents, but rather depend on the extent of three-dimensional cross-linking as seen by the loss of Si-R absorbance. Highly cross-linked silsesquioxanes show a higher dielectric value and no variation with temperature from −100 °C to 150°C range, whereas a lower value and a negative temperature dependence are seen for dielectric constants of silsesquioxane samples with little loss of Si-R absorbance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 39
Copyright
Copyright © Materials Research Society 1998

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