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Experimental Evidence of Long-Range Point Defect-Phosphorous Pair Diffusion in Silicon

  • Ammar Nayfeh (a1) and Viktor Koldyaev (a2)

Abstract

Point Defect (PD) mediated diffusion of phosphorous in silicon is studied in order to address the long standing open problem of PD-Dopant pair lifetime. A novel experimental method is suggested to increase PD-P pair lifetime for better observability and experimental resolution. In the experiment, phosphorous is implanted, followed by low temperature poly-Si deposition with in-situ doped phosphorous. The P profile shows, after low temperature (<650°C) in-situ phosphorous doped poly-Si deposition, an exponential dependence of two orders of magnitude for a significant depth scale. This indicates that the PD-P pairs survive long-range diffusion before dissociating in the Si lattice. As a result, the lifetime of PD-P pair was extracted and this provides a physical basis for TCAD simulation at the atomic scale.

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[1] Fahey, et al. “Point Defects and Dopant Diffusion in SiliconReviews of Modern Physics. 61, No.2 (1989)
[2] Cowern, N.E.B et al. “Impurity Diffusion via an Intermediate Species: The B-Si SystemPhysical Review Letters 1990 Nov 5 Vol 65 N.19 PP.24342437
[3] Cowern, N.E.B et al. “Experiments on Atomic-Scale Mechanisms of DiffusionPhysical Review Letters 1991 July 8 Vol 67 N.2 PP.212215
[4] Kol'dyaev, V.I., “Study of influence of the nonequlbrium point defect concentration gradient on the dopant flux during ion implantation at high temperaturesNuclear Instruments and Methods in Phys. Res B (1995) Vol 103 PP.446453

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