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Extrinsic Gettering with Epitaxial Misfit Dislocations

Published online by Cambridge University Press:  21 February 2011

Ali S. M. Salih ,
W. Maszara ,
H. J. Kim  and
G. A. Rozgonyi
Ali S. M. Salih
Affiliation:
Materials Engineering Department, North Carolina State University, Box 7916, Raleigh, NC 27695-7916 University of Gezira, Medani, Sudan
W. Maszara
Affiliation:
Materials Engineering Department, North Carolina State University, Box 7916, Raleigh, NC 27695-7916
H. J. Kim
Affiliation:
Materials Engineering Department, North Carolina State University, Box 7916, Raleigh, NC 27695-7916
G. A. Rozgonyi
Affiliation:
Materials Engineering Department, North Carolina State University, Box 7916, Raleigh, NC 27695-7916
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Abstract

New results are presented on Ge doped Si epitaxial layers which contain interfacial misfit dislocations. Microscopic and chemical analyses showed the preferential gettering of several metallic species (Au, Cu, Ni, and Fe) at the misfit dislocations with semiquantitative correlation between dislocation density and the captured impurity concentration. Wafer curvature was measured and shown to be less than that for typical Si3N4 and SiO2 layers used in IC fabrication. The reduction of Schottky diode leakage current has been clearly demonstrated and attributed to gettering of residual impurities, as well as signifying that, the active surface device region is not deleteriously affected by spurious defect reactions at the buried epitaxial interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 61
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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