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Fabrication of Copper-Indium-Disulfide Films onto Mo/Glass Substrates Using Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

R. Mu ,
M.H. Wu ,
Y. C. Liu ,
A. Ueda ,
D.O. Henderson ,
A.B. Hmelo ,
L.C. Feldman  and
A. Hepp
R. Mu
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville TN 37208, USA
M.H. Wu
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville TN 37208, USA
Y. C. Liu
Affiliation:
Open Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China.
A. Ueda
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville TN 37208, USA
D.O. Henderson
Affiliation:
Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville TN 37208, USA
A.B. Hmelo
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA
L.C. Feldman
Affiliation:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA
A. Hepp
Affiliation:
NASA Glen Research Center, Cleveland, OH 44135, USA
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Abstract

Pico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 730: Symposium V – Materials for Energy Storage, Generation, and Transport , 2002 , V3.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Henderson, D.O., Mu, R., et al., Materials and Design 22, (2001) 585.Google Scholar
2. Cheung, J. T. and Madden, J., J. Vac. Sci. Technol. B 5 705 (1987).Google Scholar
3. Dubowski, J. J., Williams, D. F., Sewell, P. B., and Norman, P., Appl. Phys. Lett. 46 1081 (1985).Google Scholar
4. Chung, J. T. and Sankur, H., CRC Cris. Rev. Solid State Mater. Sci. 15 63 (1988).Google Scholar
5. Hedstrom, J., Bodegard, M., Kylner, A., Stolt, L., and Shock, H.W., Proceedings of the 23rd Institute of Electrical and Electronic Engineers Photovoltaic Conference, Lewisville, Kentucky, pp. 364 (1993).Google Scholar
6. Ermer, J., Gay, R., Pier, D., and Tarrant, D., J. Vac. Sci. A 11, (1993) 1888.Google Scholar
7. Grindle, S.P., Clark, A.H., S. Rezaie-Serej, Falconer, E., McNaily, J., and Kazmerski, L.L., J. Appl. Phys. 51 (1980) 5464.Google Scholar
8. Schmid, D., Ruckh, M., Grunwals, F., and Schock, H.W., J. Appl. Phys. 73 (1993) 2902 Google Scholar
9. Morell, G., Katiyar, R.S., Weisz, S.Z., Walter, T., Schock, H.W., and Balberg, I., Appl. Phys. Lett. 69, (1996) 987.Google Scholar
10. Stolt, L., Hedstrom, J., Kessler, J., Ruckh, M., Velthaus, K.O., and Schock, H.W., Appl. Phys. Lett. 62 (1993) 597.Google Scholar
11. Xiao, H., Yang, L.C., and Rockett, A., J. Appl. Phys. 76 (1994) 1503.Google Scholar
12. Rockett, A. and Birkmire, R.W., J. Appl. Phys. 70 (1991) R81.Google Scholar