Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-27T20:25:52.503Z Has data issue: false hasContentIssue false

Facet Formation on Single Crystal TiO2 Surfaces Studied by Atomic Force Microscopy

Published online by Cambridge University Press:  21 February 2011

M. D. Antonik
Affiliation:
Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469.
J. C. Edwards
Affiliation:
Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469.
R. J. Lad
Affiliation:
Laboratory for Surface Science & Technology, University of Maine, Orono, ME 04469.
Get access

Abstract

Atomic force microscopy (AFM) and low energy electron diffraction (LEED) have been used to study the faceting behavior on (001) and (100) surfaces of a TiO2 single crystal. On the TiO2 (001) surface, LEED patterns characteristic of {011} facet planes develop after annealing below 900 °C in agreement with previous studies, but AFM shows a complex surface morphology consisting of a large distribution of facet sizes and orientations. After annealing at 1300 °C, facets do not form but rather a network of 5 – 30 nm high ridges develops over the entire surface. These ridges may be the result of surface defects produced by changes in bulk stoichiometry during annealing. On the TiO2 (100) surface, facets are also observed after annealing below 900 °C. However, these facets have extremely small height to width aspect ratios and are not discernible with LEED.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Herring, C., in Structure and Properties of Solid Surfaces, ed. Gomer, R. and Smith, C.S., (University of Chicago Press, 1953), Chapter 1.Google Scholar
2. Henrich, V.E., Surf. Sci. 57, 385 (1976).CrossRefGoogle Scholar
3. Firment, L.E., Surf. Sci. 116, 205 (1982).Google Scholar
4. Henrich, V.E., Rep. Prog. Phys. 48, 1481 (1985).CrossRefGoogle Scholar
5. Lo, W.J., Chung, Y.W. and Somorjai, G.A., Surf. Sci. 71, 199 (1978).Google Scholar
6. Tauster, S.J., Fung, S.C. and Garten, R.L., J. Am. Chem. Soc. 100, 170 (1978).CrossRefGoogle Scholar
7. Baresel, D., Gellert, W., Sarhole, W. and Scharner, P., Sensors and Actuators 6, 35 (1984).Google Scholar
8. Zhang, Z., Jeng, S.P. and Henrich, V.E., Phys. Rev. B 43, 12004 (1991).Google Scholar
9. Zhong, Q., Vohs, J.M. and Bonnell, D.A., in this MRS Proceedings (1991).Google Scholar
10. Antonik, M.D. and Lad, R.J., J. Vac. Sci. Technol. A (in press).Google Scholar
11. Chung, Y.W., Lo, W.J. and Somorjai, G.A., Surf. Sci. 64, 588 (1977).CrossRefGoogle Scholar
12. Kurtz, R.L., Surf. Sci. 177, 526 (1986).Google Scholar
13. Rohrer, G.S., Henrich, V.E., and Bonnell, D.A., Science 250, 1239 (1991).Google Scholar
14. Poirier, G.E., Hance, B.K. and White, J.M., J. Vac. Sci. Technol. A (in press).Google Scholar
15. Wyckoff, R.W.G., Crystal Structures, 2nd ed. (Wiley/Anterscience, New York, 1963).Google Scholar
16. Henrich, V.E., Prog. Surf. Sci. 14, 175 (1983).Google Scholar
17. Keller, D., Surf. Sci. 253, 353 (1991).Google Scholar
18. Park Scientific Instruments, Sunnyvale, CA (private communication).Google Scholar
19. Bursill, L.A. and Hyde, B.G., Prog. Solid State Chem. 7, 177 (1972).Google Scholar
20. Ashbee, K.H.G. and Smallman, R.E., J. Am Cer. Soc. 46, 211 (1963).CrossRefGoogle Scholar
21. Williams, E.D. and Bartelt, N.C., Science 251, 393 (1991).Google Scholar