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Facilitated C54-TiSi2 Formation With Elevated Deposition Temperature: A Study of CO-Deposited Layers

Published online by Cambridge University Press:  10 February 2011

S. Ohmi  and
R. T. Tung
R. T. Tung
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

The effect of co-deposition method on the C49- to C54-TiSi2 phase transformation was investigated. Both the co-deposition ratio of TiSix layers and the deposition temperature were found to have a significant effect on the C54 phase transformation. The optimum composition to form C54 TiSi2 phase was x∼l.5 for room temperature deposition, and x∼2.0 for samples deposited at 400°C. The incorporation of a small amount of Mo had a beneficial effect on the C54 transformation in layers deposited at room temperature, but it had little effect in layers deposited at 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 47
Copyright
Copyright © Materials Research Society 1999

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