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Feasibility of spoof surface plasmon waveguide enabled ultrathin room temperature THz GaN quantum cascade laser

Published online by Cambridge University Press:  13 February 2014

Greg Sun ,
Jacob B. Khurgin  and
Din Ping Tsai
Greg Sun
Affiliation:
University of Massachusetts Boston, Boston, Massachusetts 02125, U.S.A.
Jacob B. Khurgin
Affiliation:
Johns Hopkins University, Baltimore, Maryland 21218, U.S.A.
Din Ping Tsai
Affiliation:
National Taiwan University, Taipei, Taiwan, R.O.C.
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Abstract

We propose and study the feasibility of a THz GaN/AlGaN quantum cascade laser (QCL) consisting of only five periods with confinement provided by a spoof surface plasmon (SSP) waveguide for room temperature operation. The QCL design takes advantages of the large optical phonon energy and the ultrafast phonon scattering in GaN that allow for engineering favorable laser state lifetimes, and the SSP waveguide provides the optical confinement for the ultrathin QCL. Our analysis has shown that the waveguide loss is sufficiently low for the QCL to reach its threshold at the injection current density around 6 kA/cm2 at room temperature.

Keywords

lasernitridedevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1661: Symposium UU – Phonon-Interaction-Based Materials Design—Theory, Experiments and Applications , 2014 , mrsf13-1661-uu05-05
Copyright
Copyright © Materials Research Society 2014 

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References

Kohler, R., Tredicucci, A., Beltram, F., Beere, H. E., Linfield, E. H., Davies, A. G., Ritchie, D., Iotti, R. C., and Rossi, F., Nature 417, 156–159 (2002).CrossRefGoogle Scholar
Williams, B. S., Kumar, S., Hu, Q., and Reno, J. L., Opt. Express 13, 3331–3339 (2005).CrossRefGoogle Scholar
Belkin, M. A., Fan, J. A., Hormoz, S., Capasso, F., Khanna, S. P., Lachab, M., Davies, A. G., and Linfield, E. H., Opt. Express 16, 3242–3248 (2008).CrossRefGoogle Scholar
Belkin, M. A., Wang, Q. J., Pfl¨ugl, C., Belyanin, A., Khanna, S. P., Davies, A. G., Linfield, E. H., and Capasso, F., IEEE Sel. Top. Quantum Electron. 15, 952–967 (2009).CrossRefGoogle Scholar
Kumar, S., Chan, C.W. I., Hu, Q., and Reno, J. L., Nat. Phys. 7, 166–171 (2011).CrossRefGoogle Scholar
Fathololoumi, S., Dupont, E., Chan, W.I., Wasilewski, Z. R., Laframboise, S. R., Ban, D., Mátyás, A., Jirauschek, C., Hu, Q., and Liu, H. C., Opt. Express 20, 3866–3876 (2012).CrossRefGoogle Scholar
Sun, G. and Soref, R. A., Khurgin, J. B., Superlattices and Microstructures 37, 107–113 (2005).CrossRefGoogle Scholar
Iizuka, N., Kaneko, K., Suzuki, N., Asano, T., Noda, S., and Wada, O., Appl. Phys. Lett. 77, 648–650 (2000).CrossRefGoogle Scholar
Heber, J. D., Gmachl, C., Ng, H. M., and Cho, A. Y., Appl. Phys. Lett. 81, 1237–1239 (2002).CrossRefGoogle Scholar
Pendry, J. B., Martin-Moreno, L., Garcia-Vidal, F. J., Science 305, 847–848 (2004).CrossRefGoogle Scholar
Ebbesen, T. W., Lezec, H. J., Ghaemi, H. F., Thio, T., Wolff, P. A., Nature 391, 667–669 (1998).CrossRefGoogle Scholar
Murray, W. A. and Barnes, W. L., Adv. Mater. 19, 3771–3782 (2007).CrossRefGoogle Scholar
Rhodes, C., Franzen, S., Maria, J. P., Losego, M., Leonard, D. N., Laughlin, B., Duscher, G., and Weibel, S., J. Appl. Phys. 100, 054905 (2006).CrossRefGoogle Scholar
Sun, G., Khurgin, J. B., and Tsai, D. P., Optics Express 21, 28056–28061 (2013)Google Scholar
Lei, T., Fanciullil, M., Molnarl, R. J., Moustakasl, T. D., Graham, R. J., and Scanlon, J., Appl. Phys. Lett. 59, 944–946 (1991).CrossRefGoogle Scholar
Fiorentini, V., Bernardini, F., and Ambacher, O., Appl. Phys. Lett. 80, 1204–1206 (2002).CrossRefGoogle Scholar
Ünlü, H. and Asenov, A., J. Phys. D: Appl. Phys. 35, 591–594 (2002).CrossRefGoogle Scholar
Luo, H., Laframboise, S. R., Wasilewski, Z. R., Aers, G. C., and Liu, H. C., Appl. Phys. Lett. 90, 041112 (2007).CrossRefGoogle Scholar
Sun, G. and Khurgin, J. B., IEEE J. Quantum Electron. QE-29, 1104–1111 (1993).CrossRefGoogle Scholar
Fan, W. J., Li, M. F., Chong, T. C., and Xia, J. B., J. Appl. Phys. 79, 188–194 (1996).CrossRefGoogle Scholar
Khurgin, J. B. and Dikmelik, Y., Optical Engineering 49, 111110 (2010).CrossRefGoogle Scholar
Rusina, A., Durach, M., Stockman, M. I., J. Appl. Phys. A 100,375–378 (2010).CrossRefGoogle Scholar
Maier, S. A., Andrews, S. R., Martin-Moreno, L., Garcia-Vidal, F. J., Phys. Rev. Lett. 97, 176805 (2006).CrossRefGoogle Scholar
Williams, B. S., Kumar, S., Callebaut, H., Hu, Q., and Reno, J. L., Appl. Phys. Lett. 83, 5142–5144 (2003).CrossRefGoogle Scholar