Hostname: page-component-cb9f654ff-5jtmz Total loading time: 0 Render date: 2025-08-23T00:51:36.220Z Has data issue: false hasContentIssue false
  • English
  • Français

Fentosecond Time Resolved Surface Structural Dynamics of Optically Excited Silicon

Published online by Cambridge University Press:  22 February 2011

C. V. Shank ,
R. Yen  and
C. Hirlimann
C. V. Shank
Affiliation:
Bell Laboratories, Holmdel, New Jersey 07733
R. Yen
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974
C. Hirlimann
Affiliation:
Universite Pierre et Marie Curie, Paris, France
Get access

Abstract

Laser processing of materials has raised a number of interesting issues relating to phase transitions and the structure of optically excited semiconductors. In this paper we describe the dynamics of structural changes that take place on a silicon surface following excitation with an intense optical pulse. Second harmonic generation from the silicon surface is used as a tool to measure crystalline order with 90 femtosecond resolution. The three-fold rotational symmetry of the silicon <111> surface is observed to become rotationally isotropic within a picosecond after excitation consistent with a transition from the crystalline to the liquid molten state.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 53
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Auston, D. H., Gollvehenko, J. A., Simons, A. L., Surko, C. M., and Venkatesan, T. N. C., Appl. Phys. Lett., 33, 539 (1979).Google Scholar
2.Liu, J. M., Kurz, H., and Bloembergen, N., Appl. Phys. Lett., 41, 643 (1982).Google Scholar
3.Shank, C. V., Yen, R., and Hirlimann, C., Phys. Rev. Lett., 50, 454 (1983).Google Scholar
4.Shank, C. V., Yen, R., and Hirlimann, C., Phys. Rev. Lett., 51, 900 (1983).Google Scholar
5.Van Vechten, J. A., Tsui, R., and Saris, F. W., Phys. Lett., 74A, 422 (1979).Google Scholar
6.Yen, R., Liu, J. M., Kurz, H., and Bloembergen, N., J. Appl. Phys., A27, 153 (1982).Google Scholar
7.Bloembergen, N. and Chang, R. K., Proc. of the Physics of Quantum Electronics Conf., edited by Kelly, P. L., Lax, B., and Tannenwald, P. E. (McGraw-Hill Book Co., New York, 1966)Google Scholar
8.Bloembergen, N., Chang, R. K., Jha, S. S., and Lee, C. H., Phys. Rev., 174, 813 (1968).Google Scholar
9.Heinz, T. F., Ph.D. Thesis, University of California, Berkeley.Google Scholar
10.Guidotti, D., Driscoll, T. A., and Gerritsen, H. J., Solid State Comm., 46, 337 (1983).Google Scholar
11.Heinz, T. F., Tom, H., Shen, R., Private Communication.Google Scholar
12.Shank, C. V., Science, 219, 1027 (1983).Google Scholar
13.Fork, R. L., Shank, C. V., and Yen, R., Appl. Phys. Lett., 41, 273 (1982).Google Scholar