Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-23T13:20:21.694Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

Published online by Cambridge University Press:  25 February 2011

H. Wang ,
L. W. Fu ,
S. X. Shang ,
S. Q. Yu ,
X. L. Wang ,
Z. K. Lu  and
M.H. Jiang
H. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
L. W. Fu
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
S. X. Shang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
S. Q. Yu
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
X. L. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
Z. K. Lu
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
M.H. Jiang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
Get access

Abstract

The ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 213
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fatluzzo, E. and Merz, W., Ferroelectricity (North-Holland, Amsterdam, 1967).Google Scholar
2. Araujo, C.A., Mcmillan, L.D., Melnik, B.M., Cuchiaro, J.D.. and Scott, J.F., Ferroelectrics. 104 241–256 (1990)Google Scholar
3. Wills, L.A., Feil, W.A., Wessels, B.W. Tonge, L.M. and Marks, T.J., J. Crystal. Growth 107 712–715 (1991)Google Scholar
4. Wu, S.Y., IEEE Trans. Electro. Dev. ED–21, 499 (1974)Google Scholar