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The Formation and Annealing of Amorphous Layers of Al2O3
Published online by Cambridge University Press: 28 February 2011
Abstract
The critical dose for formation of an amorphous layer of Al2O3 by ion irradiation at 77 K has been determined. It is found to lie between 2 and 3 × 1015/cm2 if the sample is irradiated near the <0001> axis of the substrate and is found to lie in the neighborhood of 2 × 1016/cm2 if the irradiation is near the <1210> axis. The amorphous layers are found to recrystallize epitaxially if annealed at 1190 degrees C and to form a metastable microstructure upon annealing at 800 degrees C.
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- Copyright © Materials Research Society 1986
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