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The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In0.12Ga0.88As/GaAs Heterostructures

Published online by Cambridge University Press:  26 February 2011

E. A. Fitzgerald ,
P. D. Kirchner ,
G. D. Petit ,
J. M. Woodall  and
D. G. Ast
E. A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
P. D. Kirchner
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
G. D. Petit
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
J. M. Woodall
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
D. G. Ast
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

The defect structure of lattice-mismatched one micron In0.12 Ga0.88As epilayers on (001) GaAs was studied with scanning cathodoluminescence (CL) and transmission electron microscopy (TEM). CL examination of the GaAs buffer layer revealed the formation of a segmented network of defects below the interface. Cross-sectional TEM analysis shows that these defects are dislocation half-loops extending from the interface, and the vast majority of these loops lie on the GaAs side of the interface. The dislocations in the GaAs buffer layer were determined to be edge dislocations. Thus, CL images show that edge dislocations in this system are centers for non-radiative recombination. We propose that two 60° dislocations with opposite screw and interface tilt components can glide into the buffer layer to form edge dislocations. Potential energy plots for 60° dislocations near the interface and interacting with interface dislocations supports this model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 633
Copyright
Copyright © Materials Research Society 1988

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References

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