Hostname: page-component-54dcc4c588-hp6zs Total loading time: 0 Render date: 2025-09-12T20:45:49.980Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and Effects of Secondary Defects in Ion implanted Silicon

Published online by Cambridge University Press:  15 February 2011

Jack Washburn
Jack Washburn*
Affiliation:
Department of Engineering and Lawrence Berkeley Laboratory, University of California, Berkeley, California, 94720
Get access

Abstract

The clustering of isolated interstitial silicon, implanted atoms, and vacant lattice sites produced by low temperature and room temperature ion implantation during subsequent annealing is reviewed. An electron microscope method for studying the kinetics of the amorphous to crystalline transformation in silicon is described. The technique is applied to measurement of the activation energy for interface migration and the formation of microtwins for different growth directions. A very brief review of the effects of laser annealing after ion implantation is included.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 209
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Seshan, K. and Washburn, J., Phys. Stat. Sol. (a) 26, 345 (1974).Google Scholar
2. Madden, P. K. and Davidson, S. M., Rad. Effects 14, 271 (1972).CrossRefGoogle Scholar
3. Mayer, J. et al. , Can. Journ. of Phys. 46, 663 (1968).CrossRefGoogle Scholar
4. Sadana, D., unpublished data.Google Scholar
5. Muller, H. et al. , App. Phys. Lett. 26, 292 (1975).Google Scholar
6. Csepregi, L. et al. , App. Phys. Lett. 29, 92 (1976).Google Scholar
7. Radiation Effects in Semiconductors, Vook, P., ed., (Plenum Press, 1968).Google Scholar
8. Drosd, R. and Washburn, J., J. Appl. Phys. 51, 4106 (1980).CrossRefGoogle Scholar
9. Seshan, K. and Washburn, J., Rad. Eff. 26, 31 (1975).Google Scholar
10. Wu, Wei-Kuo and Washburn, J., J. Appl. Phys. 48, 3742 (1977).CrossRefGoogle Scholar
11. Sadana, D. et al. , Appl. Phys. Lett. 37, 615 (1980).Google Scholar
12. Csepregi, L. et al. , J. Appl. Phys. 48, 4234 (1977).CrossRefGoogle Scholar