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The Formation of C54 TiSi2 in The Presence of Implanted or Deposited Molybdenum

Published online by Cambridge University Press:  10 February 2011

M. Roux ,
A. Mouroux  and
S.-L. Zhang
M. Roux
Affiliation:
Royal Institute of Technology, Department of Electronics, Box E229, SE-164 40 Kista, Sweden
A. Mouroux
Affiliation:
Royal Institute of Technology, Department of Electronics, Box E229, SE-164 40 Kista, Sweden
S.-L. Zhang
Affiliation:
Royal Institute of Technology, Department of Electronics, Box E229, SE-164 40 Kista, Sweden
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Abstract

The presence of Mo, either implanted in Si substrate prior to Ti deposition or deposited at the interface between Ti and Si, leads to the formation of C54 TiSi2 at 600 °C. Without Mo, the C54 TiSi2 does not form below 700 °C. It is shown that the C54 TiSi2 formed with the implanted Mo of a nominal dose of 5x1014 at./cm2 and that formed with the deposited Mo of 0.09 nm average thickness, display similar microstructure properties. The preferential orientation of the C54 TiSi2 is <110> in the samples with implanted Mo or with 0.09 nm Mo interlayer, as well as in the reference sample without any Mo. It becomes <010> when the Mo interlayer is 0.73 nm thick. The silicide surface and Si/silicide interface are appreciably rougher for the silicides formed with 0.09 nm Mo interlayer, with implanted Mo or in the absence of Mo, than for the silicide formed with 0.73 nm Mo interlayer. The experimental results indicate that the enhanced formation of C54 TiSi2 is caused by the same effect, i.e. template mechanism, irrespective of the means of Mo addition to the Ti-Si system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 53
Copyright
Copyright © Materials Research Society 1999

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