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Formation of End-of-Range Defects in Silicon at Low Temperatures

Published online by Cambridge University Press:  26 February 2011

M. Seibt ,
J. Imschweiler  and
H. -A. Heftier
M. Seibt
Affiliation:
IV. Physikalisches Institut der Universitå't G öttingen, Bunsenstr. 13–15, 3400 Göttingen, Federal Republic of Germany
J. Imschweiler
Affiliation:
TELEFUNKEN electronic GmbH, Theresienstr.2, 7100 Heilbronn, Federal Republic of Germany
H. -A. Heftier
Affiliation:
TELEFUNKEN electronic GmbH, Theresienstr.2, 7100 Heilbronn, Federal Republic of Germany
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Abstract

We have used high resolution transmission electron microscopy to study the formation of end- of- range defects after pre- amorphization due to Ge+ - implantation and subsequent furnace annealing at temperatures below 550 C. It is shown that depending on the annealing conditions two types of extrinsic stacking faults (SFs) are formed, i.e. {113}- defects or Frank- type {111} SFs. We present a scheme allowing the controlled deposition of Si self- interstitials into {113}- defects, which can be removed more easily than Frank type SFs during subsequent RTA under constraints of low thermal budget.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1103
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Seidel, T. E., Knoell, R., Schwartz, B., Stevie, F. A. and Chu, P., JAppl. Phys. 58, 683 (1985)Google Scholar
2. Jones, K. S, Prussin, S. and Weber, E. R., Appl. Phys. A 45, 1 (1988)Google Scholar
3. Sands, T., Washburn, J., Gronsky, R., Maszara, W., Sadana, D. K. and Rozgonyi, G. A., in: Pmc. 13th Int. Conf. Def in Semicond., 1984 editors: Kimerling, L. C. and Parsey, J.M. Jr, (Metall. Soc. of AIME, NY 1985), p. 531 Google Scholar
4. Rozgonyi, G. A., Myers, E. and Sadana, D. K., in: Semiconductor Silicon 1986 editors: Huff, H. A., Abe, T. and Kolbesen, B. (The Electrochem. Soc, Pennington 1986), p. 696 Google Scholar
5. Myers, E., Rozgonyi, G. A., Sadana, D. K., Maszara, W., Wortman, J. J. and Narayan, J., Mat, I. Res. Soc. Proc. 52, 108 (1986)Google Scholar
6. Ozturk, M. C., Wortman, J. J., Osburn, C. M., Ajmera, A., Rozgonyi, G. A., Frey, E., Chu, W. -K. and Lee, C., IEEE Transactions on Electron Devices Vol 35, 659 (1988)Google Scholar
7. Myers, E., Ozturk, M. C., Wortman, J. J. and Hren, J. J, Appl. PhysLett. 53, 228 (1988)Google Scholar
8. Ehinger, K., Kakoschke, R., Hartwig, D., Walz, C. and Weng, J., IEEE 1990 Bipolar Circuits and Technology Meeting 7.3 p. 162 Google Scholar
9. Seibt, M., Imschweiler, J. and Hefner, H. -A, unpublished results Google Scholar
10. Lambert, J. A. and Dobson, P. S., PhilMag. 44, 1043 (1981)Google Scholar
11. Cerofolini, G. F., Meda, L., Polignano, M., Ottaviani, M. L., Biender, G., Clays, C., Armagliato, A. and Solmi, S., in: Semiconductor Silicon 1986, editors: Huff, H. R., Abe, T. and Kolbesen, B., (The Electrochem. Soc, Pennington 1986), p. 706 Google Scholar
12. Imschweiler, J. and Hefner, H. -A., in: ProcAnn. ESPRIT Conf. editor: Commission of the European Communities (Brussels, 1990), p. 88 Google Scholar
13. Bourret, A., Inst. Phys. Conf. Ser. No. 87 39 (1987)Google Scholar
14. Ajmera, A. C. and Rozgonyi, G. A., Appl. Phys. Lett. 52, 1269 (1986)Google Scholar