This paper proposes the novel processing technique on the formation of InSb thin film which may not be influenced by the vapor pressure difference between In and Sb. Three layers which are composed of In with 1000 A of thickness, Sb with 5000 A and In with 4000 A are deposited sequentially at room temperature. During post heat treatment of these layers, InSb compound phase begins to form and the outer In layer suppresses the reevaporation of more volatile material, Sb. Since multiple single layers are sequentially evaporated, the problem of the severe vapor pressure difference betweentwoevaporating materialsmaynotcontributetothestoichiometriccomposition which may be the most critical parameter to determine the quality of films. The characterization of a fabricated InSb thin film by X-ray diffraction and scanning electron microscope shows that the proposed multilayer method may be a powerful technique to form a high quality InSb compound thin film.