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Formation of Titanium Silicide Strap Lines by the Deposition of a Double Layer of Amorphous Silicon - Titanium

Published online by Cambridge University Press:  15 February 2011

Ana Neilde Rodrigues da Silva ,
Rogerio Furlan  and
J. J. Santiagoaviles
Ana Neilde Rodrigues da Silva
Affiliation:
Laboratorio De Sistemas Integraveis-Escola Politecnica Da Universidade De Sao Paulo, Sao Paulo, Brasil
Rogerio Furlan
Affiliation:
Laboratorio De Sistemas Integraveis-Escola Politecnica Da Universidade De Sao Paulo, Sao Paulo, Brasil University of Pennsylvania, Department Of Electrical Engineering, Philadelphia, Pa, 19104
J. J. Santiagoaviles
Affiliation:
University of Pennsylvania, Department Of Electrical Engineering, Philadelphia, Pa, 19104
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Abstract

The reaction between an amorphous silicon film, with a titanium film, yields the formation of a titanium silicide film useful in the fabrication of local interconnection lines (straps) for integrated circuits. In this work we look at the influence of the films thickness ratios on the silicide formation on silicon dioxide. For structures with 70 or 80 nm of amorphous silicon deposited on 40 nm of titanium, we found that after a low temperature treatment of 650 °C, nominally utilized in the first processing step for the formation of self-aligned silicides, the formation of the metastable TiSi2 (C 49) and Ti5Si3 phases occurs. For silicon rich structures i.e.. 90 nm of amorphous silicon on 40 nm of titanium, besides the stable TiSi2 (C54) the metastable phases mentioned above are also detected. In this case strong morphological changes, and silicon precipitates are observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 125
Copyright
Copyright © Materials Research Society 1996

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