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Free standing GaN nano membrane by laser lift-off method

Published online by Cambridge University Press:  29 May 2012

Liang Tang ,
Yuefeng Wang ,
Gary Cheng ,
Michael J. Manfra  and
Timothy D. Sands
Liang Tang
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47906, USA Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 USA
Yuefeng Wang
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47906, USA Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 USA
Gary Cheng
Affiliation:
School of Industrial Engineering, Purdue University, West Lafayette, IN 47906 USA Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 USA
Michael J. Manfra
Affiliation:
Department of Physics, Purdue University, West Lafayette, IN 47906, USA School of Materials Engineering, Purdue University, West Lafayette, IN 47906, USA School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 USA Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 USA
Timothy D. Sands
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47906, USA School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 USA Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47906 USA
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Abstract

In this work, we present a method able to fabricate thin GaN nanomembranes fit for device applications. Starting from commercial GaN on sapphire substrates, MBE was used to deposit a sacrificial layer, which comprises of a superlattice of InN/InGaN, after which thin a GaN film of hundreds of nanometers thickness was grown on top. Pulsed laser irridiation with photon energy of 2.3eV gives rise to the controlled decomposition of the sacrificial intermediate layer, which can be followed by easy separation of the top GaN membrane from the substrate. This process can be used to manufacture GaN membranes with low defect density and a wider range of thickness. We demonstrated that large area, free-standing GaN membranes, with a thickness from 200nm and up, could be made using this method, and the high crystal quality of the lift-off GaN layers is well preserved in this process.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g03-02
Copyright
Copyright © Materials Research Society 2012

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References

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