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FTIR study of copper agglomeration during atomic layer deposition of copper

  • Min Dai (a1), Jinhee Kwon (a2), Yves J. Chabal (a3), Mathew D. Halls (a4) and Roy G. Gordon (a5)...
Abstract
Abstract

The growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate ([Cu(sBu-amd)]2) and molecular hydrogen (H2) on SiO2/Si surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on SiO2 is presented involving the intensity variations of the SiO2 LO/TO phonon modes after chemical reaction with the Cu precursor and after the H2 precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C.

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6 P. Martensson ; J.-O. Carlsson , Atomic Layer Epitaxy of Copper on Tantalum. Chemical Vapor Deposition 1997, 3, (1), 4550.

18 M. K. Weldon ; V. E. Marsico ; Y. J. Chabal ; D. R. Hamann ; S.B. Christman ; E. E. Chaban , S. S., Infrared Spectroscopy as a Probe of Fundamental Processes in Microelectronics: Silicon Wafer Cleaning and Bonding,. Surface Science 1996, 368, 163.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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