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Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

Published online by Cambridge University Press:  17 March 2011

Nae-Man Park ,
Tae-Soo Kim ,
Chel-Jong Choi ,
Tae-Yeon Seong  and
Seong-Ju Park
Nae-Man Park
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Tae-Soo Kim
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Chel-Jong Choi
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Tae-Yeon Seong
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
Seong-Ju Park
Affiliation:
Kwangju Institute of Science and Technology, Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangiu, 500-712, Korea
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Abstract

Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F13.6.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Light Emission in Silicon: From Physics to Devices, edited by Lockwood, D.J. (Academic press, 1998) Chap 1.Google Scholar
2. Street, R.A., Adv. Phys. 30, 593 (1981).Google Scholar
3. Park, N.-M., Choi, C.-J., Seong, T.-Y., and Park, S.-J., Phys. Rev. Lett. 86, 1355(2001).Google Scholar
4. Lockwood, D.J., Solid State Commun. 92, 101(1994).Google Scholar
5. Carbon, M., Phys. Status Solid B 118, 463(1983).Google Scholar
6. Garcia, S., Martin, J.M., Martil, I., and Gonzalez-Diaz, G., Thin Solid Films 315, 22(1998).Google Scholar
7. Smith, D.L., J. Vac. Sci. Technol. A 11, 1843(1993).Google Scholar
8. Handbook of nanostructured Materials and Nanotechnology, ed. Nalwa, H.S. (Academic Press, London, 2001), vol 1, Chap 2.Google Scholar
9. Yasuda, T., Hwang, D.S., Park, J.E., Ikuta, K., Appl. Phys. Lett. 74, 653(1999).Google Scholar
10. Pavesi, L. et al. , J. Appl. Phys. 86, 6474(1999).Google Scholar
11. Toyama, T., Kotani, Y., Okamoto, H., and Kda, H., Appl. Phys. Lett. 72, 1489(1998).Google Scholar
12. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347(1992).Google Scholar