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Functional oxide films with engineered ferroelectric properties

Published online by Cambridge University Press:  21 May 2013

R. Wördenweber
Affiliation:
Peter Grünberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
T. Ehlig
Affiliation:
Peter Grünberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
J. Schubert
Affiliation:
Peter Grünberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Kutzner
Affiliation:
Peter Grünberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
E. Hollmann
Affiliation:
Peter Grünberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

The ferroelectric properties of anisotropically strained SrTiO3 films are analyzed by detailed measurements of the complex dielectric constant as function of temperature, frequency, bias voltage and electric field direction. The strain induces a relaxor-ferroelectric phase that persists up to room temperature. However, transition temperature and ferroelectric properties strongly depend on the orientation of the electric field and therefore on the amount of structural strain in the given electric field direction. Frequency and time dependent relaxation experiments reveal the presence and properties of polar nanoregions with randomly distributed directions of dipole moments in the film.

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Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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