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GaAsN Alloys and GaN/GaAs Double-Hetero Structures

Published online by Cambridge University Press:  21 February 2011

Michio Sato
Michio Sato*
Affiliation:
NTT Basic Research Laboratories, Atsugi, Kanagawa 243-01, Japan, sato@will.brl.ntt.jp
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Abstract

Ternary alloys; GaAsN (N<3%) were grown by plasma-assisted metalorganic chemical vapor deposition using triethylgallium, AsH3, and plasma-cracked NH3 or N2 as the precursors. More N atoms were incorporated into the alloys from N2 than NH3 at constant N/As ratios. Both photoluminescence peaks and optical absorption edges were redshifted from GaAs bandgap with increasing the N content, indicating the GaAsN alloys have narrower bandgaps than GaAs.

GaN/GaAs double-hetero structures were grown by exposing GaAs surfaces to N-radical flux to replace surface As atoms by N atoms, and by growing GaAs on the thin GaN layers. When the GaN thickness exceeded one-monolayer, the GaN/GaAs interfaces and the GaAs cap layers deteriorated drastically. The one-monolayer-thick GaN embedded in GaAs attracts electrons and shows intense photoluminescence, whereas the GaN cluster is non-radiative, probably because of the defects caused by the large lattice-mismatch between GaN and GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 285
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Weyers, M., Sato, M. and Ando, H., Jpn. J. Appl. Phys. 31, (1992) L853.Google Scholar
2 Sakai, S., Ueta, Y. and Terauchi, Y., Jpn. J. Appl. Phys. 32, (1993) 4413.Google Scholar
3 Neugebauer, J. and Van de Walle, C. G., Phys. Rev. B 51, (1995) 10568.Google Scholar
4 Weyers, M. and Sato, M., Appl. Phys. Lett. 62, (1993) 1396.Google Scholar
5 Sato, M. and Weyers, M., Inst. Phys. Conf. Ser. 129, (1993) 555.Google Scholar
6 Sato, M., J. Cryst. Growth 145, (1994) 99.Google Scholar
7 Ohkouchi, N., Miyoshi, S., Yaguchi, H., Onabe, K., Shiraki, Y. and Ito, R., 12th Record of Alloy Semiconductor Physics and Electronics Symp., (Izu-Nagaoka, 1993) 337.Google Scholar
8 Kondow, M., Uomi, K., Hosomi, K. and Mozume, T., Jpn. J. Appl. Phys. 33, (1994) L1056.Google Scholar
9 Sato, M., Jpn. J. Appl. Phys. 34, (1995) 1080.Google Scholar
10 Sato, M., Abs. of Topical Workshop on III-V Nitrides, (Nagoya, 1995) G-4; to be published in Solid-State Electronics.Google Scholar
11 Chou, C. H. and Phillips, J., J. Appl. Phys. 68, (1990) 2415.Google Scholar
12 Chou, C. H. and Phillips, J., J. Vac. Sci. Technol. A9, (1991) 2727.Google Scholar
13 Kobayashi, N. and Kobayashi, Y., Jpn. J. Appl. Phys. 30, (1991) LI699.Google Scholar
14 Kondow, M., Niwa, A., Uomi, K., Watahiki, S., Yazawa, Y., Hosomi, K. and Mozume, T., Workbook of Int. Conf. on Chemical Beam Epitaxy, (La Jolla, 1995).Google Scholar
15 Kondow, M., Niwa, A., Uomi, K., Watahiki, S., Yazawa, Y., Hosomi, K. and Mozume, T., presented at Topical Workshop on III-V Nitrides, (Nagoya, 1995) G-l.Google Scholar
16 Sato, M., Abs. of Topical Workshop on III-V Nitrides, (Nagoya, 1995) P-32; to be published in Solid-State Electronics.Google Scholar
17 Sato, M. and Horikoshi, Y., J. Appl. Phys. 66, (1989) 851.Google Scholar
18 Sato, M. and Horikoshi, Y., J. Appl. Phys. 69, (1991) 7697.Google Scholar
19 Sato, M. and Horikoshi, Y., Appl. Phys. Lett. 56, (1990) 1555.Google Scholar