Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T08:10:07.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Gallium Arsenide and Silicon Optical Assemblies: An Advanced Glass-Polymer-Semiconductor Adhesion Process

Published online by Cambridge University Press:  21 February 2011

George J. Vendura Jr.
George J. Vendura Jr.*
Affiliation:
Solar Union Materials and Microelectronics, Box 124, Los Alamitos, California 90720
Get access

Abstract

A simple adhesion process has been developed for applying glass lenses to the active surfaces of Si and GaAs optical devices such as detectors and solar cells [1]. The method, which uses a film of fluorinated ethylene propylene (FEP) offers reliability, cost and throughput advantages over the conventional dimethyl silicone adhesive. Critical to the process is the ion bombardment of individual surfaces before assembly. The resulting enhanced adhesion suggests some modification of surface properties. Four possible mechanisms are briefly discussed. The technique is believed to have broad applicability to amorphous and crystalline semiconductor systems and devices other than those under test.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 69
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Vendura, George J. Jr., U.S. Patent No. 8 603 885 (3 July 1986).Google Scholar
2. Chang, C.A., Baglin, J.E.E., Schrott, A.G. and Lin, K.C., Appl. Phys. Lett. 51 (2), 103–105 (1987).CrossRefGoogle Scholar
3. Werner, B.T., Vreeland, T. Jr., Mendenhall, M.H., Qui, Y. and Tombrello, T.A. in Interfaces and Contacts, edited by Ludeke, R. and Rose, K. (Mater. Res. Soc. Proc. 18, Boston, MA 1982) pp. 163–166.Google Scholar
4. Broder, J.D. and Marsik, S.J., Proceedings of the Thirteenth Photovoltaic Specialists Conference (Washington D.C. 1978) pp. 122–125.Google Scholar
5. National Aeronautics and Space Administration, Report No. TM-86194 (August, 1985).Google Scholar
6. Kogoma, M. and Turban, G., Plasma Chem. and Plasma Process. 6 (4) 349–380 (1986).CrossRefGoogle Scholar
7. Kelba, J.A., Rogers, J.W., Jr. and Ward, S.J., J. Mater. Res. 1 (5) 717–723 (1986).Google Scholar
8. Boeda, J.C., DeMendez, M.. Legeay, G. and Brosse, J.C., Rev. Gen. Electr. 5, 15–21 (1987).Google Scholar
9. Puglisi, O., Licciardello, A., Pignataro, S., Calcogno, L. and Foti, G., Radiat. Eff. 98 (1–4) 161–170 (1986).CrossRefGoogle Scholar
10. Bottiger, J., Baglin, J.E.E., Brusic, V., Clark, G.J. and Anfiteatro, D. in Thin Films and Interfaces II, edited by Baglin, J.E.E., Campbell, D.R. and Chu, W.K. (Mater. Res. Proc. 25, Boston, MA 1983) pp. 203–208.Google Scholar