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Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

Published online by Cambridge University Press:  21 March 2011

W. K. Mui ,
M. K. Lui ,
C. C. Ling ,
C. D. Beling ,
S. Fung ,
K. W. Cheah ,
K. F. Li  and
Y. W. Zhao
W. K. Mui
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
M. K. Lui
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
C. C. Ling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
C. D. Beling
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
S. Fung
Affiliation:
Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China
K. W. Cheah
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong, P. R. China
K. F. Li
Affiliation:
Department of Physics, Hong Kong Baptist University, Hong Kong, P. R. China
Y. W. Zhao
Affiliation:
P.O. Box 912, Material Science centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. Chinacorrespondence: ccling@hkucc.hku.hk
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Abstract

Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSb samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10K, a transition peak having a photon energy of about 777meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777meV transition is related to the VGaGaSb defect, which is the proposed residual acceptor of GaSb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.5.1
Copyright
Copyright © Materials Research Society 2002

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