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GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

Published online by Cambridge University Press:  15 February 2011

M. Losurdo ,
P. Capezzuto  and
G. Bruno
M. Losurdo
Affiliation:
Plasma Chemistry Research Center-CNR, via Orabona 4- 70126 Bari, Italy, cscpmll8@area.ba.cnr.it
P. Capezzuto
Affiliation:
Plasma Chemistry Research Center-CNR, via Orabona 4- 70126 Bari, Italy, cscpmll8@area.ba.cnr.it
G. Bruno
Affiliation:
Plasma Chemistry Research Center-CNR, via Orabona 4- 70126 Bari, Italy, cscpmll8@area.ba.cnr.it
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Abstract

Cubic and hexagonal GaN layers have been grown on GaAs (001) and α-Al2O3 (0001) substrates, respectively, by remote plasma metalorganic chemical vapor deposition (RPMOCVD). In situ spectroscopic ellipsometry is used to monitor in real time the chemistry and kinetics of the GaN growth. The subtrate/GaN interface formation is highlighted and the effect of the substrate plasma nitridation on the initial growth stage is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.12
Copyright
Copyright © Materials Research Society 1999

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