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GaN Growth on Si Using ZnO Buffer Layer

Published online by Cambridge University Press:  01 February 2011

K.C. Kim ,
S.W. Kang ,
O. Kryliouk ,
T.J. Anderson ,
D. Craciun ,
V. Craciun  and
R.K. Singh
K.C. Kim
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
S.W. Kang
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
O. Kryliouk
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
T.J. Anderson
Affiliation:
Department of Chemical Engineering, P.O. Box 116005, Gainesville, FL 32611-6005 D. Craciun National Institute for Laser, Plasma and Radiation, Romania
D. Craciun
Affiliation:
National Institute for Laser, Plasma and Radiation, Romania
V. Craciun
Affiliation:
Materials Sciences and Engineering, P.O. Box 116400, Gainesville, FL 32611-6400
R.K. Singh
Affiliation:
Materials Sciences and Engineering, P.O. Box 116400, Gainesville, FL 32611-6400
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Abstract

ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600°C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C7.7
Copyright
Copyright © Materials Research Society 2003

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