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GaN Quantum Dots in AlxGa1-xN Confined Layer Structures

Published online by Cambridge University Press:  10 February 2011

Satoru Tanaka ,
Hideki Hirayama ,
Sohachi Iwai  and
Yoshinobu Aoyagi
Satoru Tanaka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan,
Hideki Hirayama
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan,
Sohachi Iwai
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan,
Yoshinobu Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan,
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Abstract

Nanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metalorganic chemical vapor deposition (MOCVD), by using a ‘surfactant’ which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x=0∼0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 135
Copyright
Copyright © Materials Research Society 1997

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