Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-29T03:32:51.017Z Has data issue: false hasContentIssue false
  • English
  • Français

Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP

Published online by Cambridge University Press:  25 February 2011

S.S. Chandvankar ,
A.K. Srivastava ,
B.M. Arora  and
D.K. Sharma
S.S. Chandvankar
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
A.K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
B.M. Arora
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
D.K. Sharma
Affiliation:
Tata Institute of Fundamental Research, Homi Bhabha Road, Bombay 400005, India
Get access

Abstract

Photoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice matched to InP. Ge doping of these samples results in highly compensated material, with the highest Ge content sample giving a p type conductivity with carrier concentration of 5 ×1017 cm-3. Low temperature PL spectra of these samples show a broad peak from 0.55 to 0.77 eV due to Ge. The peak of luminescence shifts to lower energy with increasing Ge content. The peak position shifts to higher energy with increasing excitation like in a D-A pair transition. The PL spectra have been explained on the basis of a model which assumes tail states near the band edges due to disorder produced by the presence of Ge in the lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 203
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 InGaAsP Alloy Semiconductors, ed. by Pearsall, T.P. (Wiley, New York, 1982)Google Scholar
2 Houston, P.A., J. Mater. Science 16, 2935 (1981)Google Scholar
3 Antypass, G.A. and Shen, L.Y.L., Inst. Phys. Conf. Ser. 33b, 96 (1977)Google Scholar
4 Zschauer, K.H. in Festkorper Probleme XV, edited by Queisser, H.J. (Pergamon, Braunschweig, 1975) p.1.Google Scholar
5 Kuphal, E., J. Cryst. Growth 54, 117 (1981)Google Scholar
6 Chandvankar, S.S., Rajalakshmi, R., Srivastava, A.K., and Arora, B.M., J. Cryst. Growth 88, 303 (1988)Google Scholar
7 Chandvankar, S.S. and Arora, B.M., J. Cryst. Growth, 94, 270 (1989)Google Scholar
8 Arora, B.M., Chakravarty, S., Chandvankar, S.S., Rajalakshmi, R. and Srivastava, A.K., Mate. Res.Soc.Symp. Proc. 104, 505 (1988)Google Scholar
9 Srivastava, A.K., Ind. J. of Pure and Appl. Phys. Spl. Issue 26 (1989)Google Scholar
10 Goetz, K.H., Bimberg, D., Jurgensen, H., Selders, J., Solomonov, A.V., Glinskii, G.F. and Razeghi, M., J. Appl. Phys. 54, 4543 (1983)`Google Scholar
11 Shlovskii, B.I. and Efros, A.L., in Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984)Google Scholar