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Generation-Recombination Noise in a-Si:H Studied by Device Simulations

Published online by Cambridge University Press:  01 February 2011

J.P.R. Bakker ,
P.J.S. van Capel ,
B.V. Fine  and
J.I. Dijkhuis
J.P.R. Bakker
Affiliation:
Debye Institute/Atom Optics and Ultrafast Dynamics
P.J.S. van Capel
Affiliation:
Debye Institute/Atom Optics and Ultrafast Dynamics
B.V. Fine
Affiliation:
Spinoza Institute, Department of Physics and Astronomy, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, the Netherlands
J.I. Dijkhuis
Affiliation:
Debye Institute/Atom Optics and Ultrafast Dynamics
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Abstract

An attempt is made to interpret low-frequency noise measured in a-Si:H n-i-n devices based on the assumption that the noise is due to generation-recombination (g-r) processes. The interpretation is based on a spatial distribution of recombination lifetimes of electrons obtained with the help from the AMPS-1D device simulation program. These lifetimes have the same order of magnitude as that of the noise observed. Further, a distribution of lifetimes naturally results from band bending. Simulations of noise spectra are obtained by multiplication of a phenomenological weight factor to the Lorentzian spectral contribution corresponding to the local electron lifetime. There are, however, two problems with this interpretation: (i) we were not able to come up with a reasonable noise description, where the relatively long electron lifetimes were not overshadowed by much shorter times (ii) the current description, where variance is included in a weight factor, is still incomplete, and therefore we can not explain the shape of the weight factor yet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A2.6
Copyright
Copyright © Materials Research Society 2002

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