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Grain Growth During Sintering of Nanocrystalline Y and/or CE-Doped Tetragonal Zirconia

Published online by Cambridge University Press:  16 February 2011

Michel M. R. Boutz
Affiliation:
University of Twente, Faculty of Chemical Technology, Lab. for Inorganic Chemistry, Materials Science and Catalysis, P.O.Box 217, Enschede, The Netherlands.
G. S. A. M. Theunissen
Affiliation:
University of Twente, Faculty of Chemical Technology, Lab. for Inorganic Chemistry, Materials Science and Catalysis, P.O.Box 217, Enschede, The Netherlands.
A. J. A. Winnubst
Affiliation:
University of Twente, Faculty of Chemical Technology, Lab. for Inorganic Chemistry, Materials Science and Catalysis, P.O.Box 217, Enschede, The Netherlands.
A. J. Burggraaf
Affiliation:
University of Twente, Faculty of Chemical Technology, Lab. for Inorganic Chemistry, Materials Science and Catalysis, P.O.Box 217, Enschede, The Netherlands.
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Abstract

A non-isothermal analysis of grain growth in tetragonal zirconia ceramics doped with various amounts of yttria and/or ceria in the temperature range 700–1150°C is presented. In these nanocrystalline ceramics, prepared by the gel precipitation technique, two grain growth regimes are recognized. At temperatures up to 900–1000°C grain growth proceeds slowly at high values of porosity (55%→35%); probably by means of a surface diffusion mechanism. At higher temperatures grain growth is much faster and occurs in locally dense regions by a normal grain growth or an impurity drag mechanism. Apparent activation energies are given for five compositions in both regimes.

The isothermal sintering behavior of 3 mol% Y2O3-containing TZP at 1050°C is analysed. A dense ceramic with a crystallite size in the nanometer regime (< 100nm) is obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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