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Growth and Characterization of Epitaxial CoSi2-Contacts

Published online by Cambridge University Press:  25 February 2011

C. Adamski ,
S. Meiser ,
D. Uffmann ,
L. Niewöhner  and
C. Schäffer
C. Adamski
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
S. Meiser
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
D. Uffmann
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
L. Niewöhner
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
C. Schäffer
Affiliation:
Institut für Halbleitertechnologie, Universität Hannover, Appelstr. 11A, D-3000 Hannover, Federal Republic of Germany
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Abstract

The growth of epitaxial CoSi2 by means of SPE on heavily ion implanted Si(111) was investigated with LEED, RBS and TEM. After silicide formation, the dopant distribution in silicide and silicon was determined by means of SIMS. In a self-aligned process epitaxial CoSi2/Si p+ contacts have been produced. The specific contact resistance was found to be lower than for polycrystalline CoSi2 contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 117
Copyright
Copyright © Materials Research Society 1990

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References

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