Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-16T00:41:09.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of Low Temperature InP by Gas Source MBE

Published online by Cambridge University Press:  15 February 2011

G. N. Maracas ,
K. T. Shiralagi ,
R. A. Puechner ,
F. Yu ,
K. T. Choi ,
J. S. Bow ,
R. Ramamurti ,
M. J. Kim  and
R. W. Carpenter
G. N. Maracas
Affiliation:
Arizona State University, Dept. of Electrical Engineering, Center for Solid State Electronics Research
K. T. Shiralagi
Affiliation:
Arizona State University, Dept. of Electrical Engineering, Center for Solid State Electronics Research
R. A. Puechner
Affiliation:
Arizona State University, Dept. of Electrical Engineering, Center for Solid State Electronics Research
F. Yu
Affiliation:
Arizona State University, Dept. of Electrical Engineering, Center for Solid State Electronics Research
K. T. Choi
Affiliation:
Arizona State University, Dept. of Electrical Engineering, Center for Solid State Electronics Research
J. S. Bow
Affiliation:
Arizona State University, Dept. of Electrical Engineering, Center for Solid State Electronics Research
R. Ramamurti
Affiliation:
Center for Solid State Sciences,Tempe, AZ 85287-5706
M. J. Kim
Affiliation:
Center for Solid State Sciences,Tempe, AZ 85287-5706
R. W. Carpenter
Affiliation:
Center for Solid State Sciences,Tempe, AZ 85287-5706
Get access

Abstract

The introduction of GaAs grown at low MBE growth temperatures has spurred considerable activity in attempts to understand conduction mechanisms and optical properties. In LT GaAs, the formation of microscopic As precipitates dominates the conductivity, producing electronic transport mainly by variable range hopping conduction. The resulting high resistivity and short carrier lifetimes have enabled the use of LT GaAs in FET buffer layers as well as in ultra-fast optical switches. An extension to AlInAs has also been performed and it was seen that variable range hopping is also present in the Asbased ternary.

We report the optical and electronic properties of InP grown at low temperatures in a gas source MBE using dimeric phosphorus produced from cracked phosphine. The conductivity is higher than the equivalent GaAs LT material and does not have the same temperature dependence. The conditions under which growth occurs ie, substrate temperatures, V/ill ratios and annealing is explored. The structural properties, temperature dependence of the conductivity, deep level structure and the photoluminescence properties of the material are also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 271
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Smith, F.W., Calawa, A.R., Chen, C.-L., Mantra, M.J. and Mahoney, L.J., IEEE El. ev. Lett., vol. EDL-9, no. 77, (1988)Google Scholar
[2]Miller, J.N. and Low, T.S., J. Crystal Growth 111, p30-–37, (1991)Google Scholar
[2] R. Metzger & Brown, A., WOCSEMMAD 1991Google Scholar
[4]Shiralagi, K.T., Choi, K.Y., Droopad, R., Maracas, G.N., “Hydride Cracker Nozzle Design for Gas Source Molecular Beam Epitaxy,” to appear in J. Vac. Sci. Tech. A, Jan/Feb 1992.Google Scholar
[5]Melloch, M.R., Mahalingham, K., Otsuka, N., Woodall, J.M. and Warren, A.C., “GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates, J. Crystal Growth 111, pp39–42, (1991)Google Scholar
[6]McFee, J.H., Miller, B.I. and Bachmann, K.J.,. J. Electrochemical Society: Solid State cience and Technology, pp. 259–272, (1977)Google Scholar
[7]Puechner, R.A., Johnson, D.A., Shiralagi, K.T., Droopad, R. and Maracas, G.N., “Electrical and Optical Characterization of Gas Source and Solid Source MBE Low Temperature Buffers,” J. Cryst. Growth, 111, 43–49 (1991)Google Scholar
[8]Droopad, R., Puechner, R.A., Shiralagi, K.T., Choi, K.Y. and Maracas, G.N., “Low Temperature GaAs Grown by Gas Source MBE,” 3rd International Conference on Chemical Beam Epitaxy, Oxford, UK, September 1991 (to be published in J. Vac. Sci. Tech.)Google Scholar
[9] Mary Gray, AT&T - private communicationGoogle Scholar
[10]Iliadis, A.A. and Ovadia, S., J. Appl. Phys., 63(11), pp. 5460–5463, (1988)Google Scholar
[11]Hess, K., Statk, N. and Benz, K.W., J. Electrochem. Soc., Vol.121, 1208 (1974)Google Scholar
[12]Warren, A.C., Woodall, J.M., Freeouf, J.L., Grischkowsky, D., Mclnturff, D.T., Melloch, M.R. and Otsuka, N., Appl. Phys. Lett. 57 (13), pp. 1331–1333, (1990)Google Scholar