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Growth and Characterization of PbTiO3 and Pb(Zr,Ti)O3 Thin Films by MOCVD

Published online by Cambridge University Press:  15 February 2011

Y. Gao ,
W. Dong  and
B.A. Turtle
Y. Gao
Affiliation:
Dept. of Materials Eng., New Mexico Inst. of Mining and Technology, Socorro, NM 87801
W. Dong
Affiliation:
Dept. of Materials Eng., New Mexico Inst. of Mining and Technology, Socorro, NM 87801
B.A. Turtle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Ferroelectric PbTiO3 and Pb(Zr,Ti)O3 thin films with a perovskite structure were grown on MgO and Pt/Ti/SiO2/Si by MOCV.D. The microstructure and composition of the films were characterized by x-ray diffraction, SEM, and AES. Preferred orientation of either (111) or (100)/(001) was obtained on the Pt/Ti/SiO2/Si substrates at temperatures from 600 °C to 650 °C The preferred (111) orientation was attributed to the formation of the Pt3Ti phase in the Pt layer of the substrates, whereas the (100)/(001) orientations were inferred as the growth rate effect. AES depth profiling indicated a uniform composition through the thickness of the PZT films. However, SEM showed different topography and microstructure of the PZT films deposited in different oxygen partial pressure. Electrical properties of the PZT films appear varied as a function of the oxygen partial pressure in the reactor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 337
Copyright
Copyright © Materials Research Society 1995

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References

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