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Growth and Doping of AlxGa1−xN Deposited Directly on α(6H)-SiC(0001) Substrates via Organometallic Vapor Phase Epitaxy

Published online by Cambridge University Press:  21 February 2011

M.D. Bremser ,
W.G. Perry ,
N.V. Edwards ,
T. Zheleva ,
N. Parikh ,
D.E. Aspines  and
R.F. Davis
M.D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
W.G. Perry
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
N.V. Edwards
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
T. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
N. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC.
D.E. Aspines
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC .
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907 Raleigh, NC 27695-7907
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Abstract

Monocrystalline AlxGa1−xN(0001) (0.05 ≤ x ≤ 0.70) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been grown at high temperatures via OMVPE directly on vicinal and on-axis α(6H)-SiC(0001) wafers using TEG, TEA and ammonia in a cold-wall, vertical, pancake-style reactor. The surface morphologies were smooth and die densities and distributions of dislocations were comparable to that observed in GaN(0001) films grown on high temperature A1N buffer layers. Double-crystal XRC measurements showed a FWHM value as low as 186 arc sec for the (0002) reflection. Spectra obtained via CL showed strong near band-edge emissions with FWHM values as low as 31 meV. The compositions of the AlxGa1−xN films were determined using EDX, AES and RBS and compared to the values of the bandgap as measured by spectral ellipsometry and CL emissions. A negative bowing parameter was found. Controlled n-type, Si-doping of AlxGa1−xN for x ≤ 0.4 has been achieved with net carrier concentrations ranging from ≈ 2 × 1017 cm−3 to 2 × 1019 cm−3. Acceptor doping with Mg for x < 0.13 was also successful.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 195
Copyright
Copyright © Materials Research Society 1996

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References

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